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2 inch Free-Standing GaN Substrates
 
 

 

2 inch Free-Standing GaN Substrates
 
 
 
Specifications:

Item
GaN-FS-C-U-C50
GaN-FS-C-N-C50
GaN-FS-C-SI-C50
Dimensions
§¶ 50.8 mm ± 1 mm
Thickness
350 ± 25 µm
Useable Surface Area
> 90%
Orientation
C-plane (0001) off angle toward M-Axis 0.35°± 0.15°
Orientation Flat
(1-100) ± 0.5°, 16.0 ± 1.0 mm
 
Secondary Orientation Flat
(11-20) ± 3°, 8.0 ± 1.0 mm
 
Total Thickness Variation
≤ 15 µm
BOW
≤ 20 µm
*Conduction Type
N-type
(Undoped)
N-type
(Ge-doped)
Semi-Insulating
(Fe-doped)
Resistivity(300K)
< 0.5 Ω·cm
< 0.05 Ω·cm
>106 Ω·cm
Dislocation Density
1~9x105 cm-2
5x105 cm-2
~3x106 cm-2
1~9x105 cm-2
1~3x106 cm-2
1~3x106 cm-2
Polishing
Front Surface: Ra < 0.2 nm. Epi-ready polished
Back Surface: Fine ground
Package
Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.

* 3 inch and 4 inch Free-Standing GaN Substrates are coming soon.

 
 
 
       
 
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