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  GaN Templates 2 inch & 4 inch
  2 inch Free-Standing GaN Substrates
  Free-standing GaN Substrates (Customized size)
  Non-Polar and Semi-Polar Free-Standing GaN Substra
  2 inch AlN Templates
 
 

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GaN Templates 2 & 4 inch
 
 

 

 
 
2 inch GaN Templates

 Specifications:

Item
GaN-T-C-U-C50
GaN-T-C-N-C50
GaN-T-C-P-C50
Dimensions
§¶ 50.8mm ± 0.1mm
Thickness
4 µm, 20 µm
4 µm
Orientation
C-plane(0001) ± 0.5°
 Conduction Type
N-type
(Undoped)
N-type
(Si-doped)
P-type
(Mg-doped)
Resistivity(300K)
< 0.5 Ω·cm
< 0.05 Ω·cm
~ 10 Ω·cm
Carrier Concentration
< 5x1017 cm-3
> 1x1018 cm-3
> 6x1016 cm-3
Mobility
~ 300cm2/V·s
~ 200 cm2/V·s
~ 10 cm2/V·s
Dislocation Density
Less than 5x108 cm-2
Substrate structure
GaN on Sapphire (Standard: SSP Option: DSP)
Useable Surface Area
> 90%
Package
Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere.

* Other thickness can be customized

4 inch GaN Templates

Specifications:

Item
GaN-T-C-U-C100
GaN-T-C-N-C100
Dimensions
§¶ 100 mm ± 0.1 mm
Thickness
4 µm, 20 µm
Orientation
C-plane(0001) ± 0.5°
Conduction Type
N-type
(Undoped)
N-type
(Si-doped)
Resistivity(300K)
< 0.5 Ω·cm
< 0.05 Ω·cm
Carrier Concentration
< 5x1017 cm-3
> 1x1018 cm-3
Mobility
~ 300cm2/V·s
~ 200 cm2/V·s
Dislocation Density
Less than 5x108 cm-2
Substrate structure
GaN on Sapphire(Standard: SSP Option: DSP)
Useable Surface Area
> 90%
Package
Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere.

 

 

 
 
 
       
 
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