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  Non-Polar and Semi-Polar Free-Standing GaN Substra
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Non/Semi Polar Free-Standing GaN Substrates
 
 

Non Polar and Semi Polar Free-Standing GaN Substrates
 
 
 
Specifications:

Item
GaN-FS-A-U/N/SI-S
GaN-FS-M-U/N/SI-S
GaN-FS-SP-U/N/SI-S
Dimensions
5.0~10.0 mm × 10.0 mm; ± 0.2 mm
5.0~10.0 mm × 20.0 mm; ± 0.2 mm
Thickness
350 ± 25 µm
Orientation
A-plane(11-20) off angle toward C-Axis -1°± 0.2°
M-plane(1-100) off angle toward C-Axis -1°± 0.2°
(20-21)
(20-2-1)
(11-22)
(30-31)
(10-11)
Total Thickness Variation
≤ 10 µm
BOW
≤ 10 µm
Conduction Type
 
 
Resistivity(300K)
N-type(Undoped) < 0.5 Ω·cm
N-type(Ge-doped) < 0.05 Ω·cm
Semi-Insulating(Fe-doped) > 106 Ω·cm
Dislocation Density
5x105 cm-2~3x106 cm-2
Useable Surface Area
> 90%
Polishing
Front Surface: Ra < 0.2nm. Epi-ready polished
Back Surface: Fine ground
Package
Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.

* Other thickness, size and offcut can be customized

 
 
 
       
 
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